PART |
Description |
Maker |
MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
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ON Semiconductor
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MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
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ETC Motorola, Inc ON Semiconductor
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MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola, Inc. ON Semiconductor
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MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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